| 摘要 |
PROBLEM TO BE SOLVED: To provided a semiconductor device and its designing method capable of suppressing the generation of a subthreshold leak current in a circuit, even if the circuit that should be operated only in a specified case is included in the semiconductor device. SOLUTION: Circuits of cells C4a and C5 should be operated only in such a specified case as a test circuit. If they should be operated, a power supply branch line L3a is connected to the source of a MISFET, and the power supply branch line L3a is applied with ground potential GND so that an operation voltage is applied between a source and a drain. If they should not be operated, the power supply branch line L3a is applied with power supply potential VDD so that no operation voltage is applied between the source and the drain. Since no operation voltage is applied between the source and the drain, the generation of the subthreshold leak currents I4 and I5 in the circuit is suppressed. COPYRIGHT: (C)2007,JPO&INPIT
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