| 发明名称 |
Method of working nitride semiconductor crystal |
| 摘要 |
In a method of working a crystal, when a nitride semiconductor crystal is worked, voltage is applied between the nitride semiconductor crystal and a tool electrode to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.
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| 申请公布号 |
US2006292832(A1) |
申请公布日期 |
2006.12.28 |
| 申请号 |
US20060472417 |
申请日期 |
2006.06.22 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI;HACHIGO AKIHIRO;NISHIURA TAKAYUKI |
| 分类号 |
H01L21/00;B23H9/00;B24B47/22;H01L21/304 |
主分类号 |
H01L21/00 |
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