| 摘要 |
<p>A write method for a nonvolatile semiconductor storage device having a resistance storing element that stores high and low resistance states and switches between them in response to a voltage application, wherein a variable resistance element is connected in parallel to the resistance storing element, and when a voltage is applied to the resistance storing element so as to switch between the high and low resistance states, the resistance value of the variable resistance element is established in accordance with the resistance state of the resistance storing element such that an impedance match is achieved between a write circuit, which applies the voltage to the resistance storing element, and the combined resistance of the resistance storing element and variable resistance element.</p> |
