| 摘要 |
Film forming method and apparatus for a semiconductor process are provided to remove securely a native oxide layer by using an etching gas with chlorine. An object substrate(W) is loaded into a reaction chamber(2). The object substrate has an object surface with a native oxide layer. At this time, the temperature of the inside of the reaction chamber is lower than a predetermined critical temperature capable of stabilizing the native oxide layer. The native oxide layer is removed from the object substrate by performing an etching process using an etching gas under a predetermined temperature condition. The etching gas contains chlorine instead of fluorine.
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