| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to minimize deformation of ArF resist by etching a hard mask composed of Pt, Ir or Ru while using chlorine-based gas. An amorphous carbon layer(14) is deposited on a semiconductor substrate(10) having an underlying layer. A hard mask is deposited on the amorphous carbon layer, made of metal having different etch selectivity from that of the amorphous carbon layer. A photoresist pattern(16) is formed on the hard mask. The hard mask is etched by using the photoresist pattern to form a hard mask pattern(15a) wherein mixture gas of Ar and Cl2 is used in the etch process. The photoresist pattern is removed. The amorphous carbon layer is etched by using the hard mask pattern to form a hole exposing a part of the underlying layer. The hard mask pattern is removed.
|
