| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing sheet resistance or junction leak current from increasing even when silicifying a silicon germanium layer by means of a thin nickel film. SOLUTION: The manufacturing method of a semiconductor device includes a step of forming a gate electrode 54p on a semiconductor substrate 34, a step of forming a source/drain diffusion layer 64p in the semiconductor substrate on both sides of the gate electrode, a step of embedding the silicon germanium layer 100b in the source/drain diffusion layer, a step of forming an amorphous layer 101 on an upper part of the silicon germanium layer, a step of forming the nickel film 66 on the amorphous layer, and forming a silicide film 102b on the silicon germanium layer by causing the nickel film to react with the amorphous layer by means of heat treatment. COPYRIGHT: (C)2007,JPO&INPIT
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