| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of further reducing the layout area by performing redundancy processing by the unit of word line without deteriorating the access time associated with redundancy determination. SOLUTION: In a memory of block structure, assignment of words of a redundant address and a non-redundant address is performed for each memory block, and selection of word line is performed in parallel. Thus, the deterioration of delay in the word line decoding for determining the redundant address is avoided. Further, by controlling a sense or write amplifiers or a column switch, the data for the memory blocks with no access are inhibited. Thus, the high-speed access time similar to the non-redundant memory can be attained without preparing an unnecessary selector or the like. COPYRIGHT: (C)2007,JPO&INPIT
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