发明名称 Non-volatile semiconductor memory device
摘要 To achieve a high-speed and reliable read operation. A unit cell is constituted by a select gate 3 provided in a first region and on a substrate 1 with an insulating film 2 interposed inbetween, a floating gate 6 a provided in a second region adjacent to the first region with an insulating film 5 interposed inbetween, a diffusion region 7 a provided in a third region adjacent to the second region and on the surface of the substrate, and a control gate 11 provided on the top of the floating gate 6 a with an insulating film 8 interposed inbetween. Each data bit is stored using corresponding first unit cell and second unit cell.
申请公布号 US2006289922(A1) 申请公布日期 2006.12.28
申请号 US20060453796 申请日期 2006.06.16
申请人 NEC ELECTRONICS CORPORATION 发明人 SUDO NAOAKI;KANAMORI KOHJI
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
主权项
地址