发明名称 |
Finfets, nonvolatile memory devices including finfets, and methods of forming the same |
摘要 |
A FinFET includes a fin that is on a substrate and extends away from the substrate. A device isolation layer is disposed on the substrate on both sides of the fin. An insulating layer is between the fin and the substrate. The insulating layer is directly connected to the device isolation layer and has a different thickness than the device isolation layer. A gate electrode crosses over the fin. A gate insulating layer is between the gate electrode and the fin. Source and drain regions are on the fins and on opposite sides of the gate electrode. Related nonvolatile memory devices that include FinFETs and methods of making FinFETs and nonvolatile memory devices are also disclosed.
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申请公布号 |
US2006292781(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20060473487 |
申请日期 |
2006.06.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN |
分类号 |
H01L21/8234;H01L29/94 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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