发明名称 Memory module e.g. fully buffered dual inline memory module, for use as e.g. direct memory access, in memory system of computer system, has semiconductor memory units e.g. dynamic random access memory, to store data and having low latency
摘要 <p>The module has semiconductor memory units (311-328) e.g. dynamic random access memory and static random access memory, to store data and having low latency. A memory buffer (329) buffers the data, which is outputted from the unit to module connections, and another data and a signal that are provided to the unit by an external unit through the connections. An internal bus transfers the signal and data between the buffer and connections. Independent claims are also included for the following: (1) a memory system with a set of memory modules (2) a computer system with a memory system comprising a set of memory modules.</p>
申请公布号 DE102006021022(A1) 申请公布日期 2006.12.28
申请号 DE20061021022 申请日期 2006.04.28
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 KIM, HONG-KYUN;CHOI, DO-CHAN
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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