| 摘要 |
<p>This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF<SUB>4</SUB> and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.</p> |
