METHOD FOR MANUFACTURING SIMOX WAFER AND SIMOX WAFER

摘要

A method for fabricating a SIMOX(separation by implanted oxygen) wafer is provided to securely detect particles or defects attached to the surface of MLD(modified low dose)-SIMOX by reducing the roughness of the surface of an SOI(silicon on insulator) layer of the MLD-SIMOX and an interface between the SOI layer and a BOX(buried oxide) layer. Oxygen ions are implanted while a silicon wafer(1) is heated so that a high density layer(2) of oxygen is formed on the silicon wafer. Oxygen ions are implanted into the resultant wafer to form an amorphous layer(3) in the silicon wafer. The resultant silicon wafer is heat-treated to form a buried oxide layer. In the process for forming the amorphous layer, the oxygen ion are implanted after the silicon wafer is preheated to a temperature lower than that of the process for forming the high density layer of oxygen. The oxygen ions can be implanted a number of times in the process for forming the amorphous layer.