| 摘要 |
PROBLEM TO BE SOLVED: To improve a driving circuit and a method while taking into account a distinct feature of a bidirectional switch which is a depression type element. SOLUTION: A driving circuit for a half bridge using a bidirectional semiconductor switches in an embodiment of the present invention includes a high side driver operable to control a high side bidirectional semiconductor switch, wherein the high side driver provides a negative bias voltage to the bidirectional semiconductor switch to turn the high side bidirectional semiconductor switch off. A low side driver may be operable to control a low side bidirectional semiconductor switch. An external voltage source with a negative terminal of the voltage source connected to the high side driver may be provided. A high side driving switch may be positioned between the negative terminal of the voltage source and the high side driver and operable to connect the high side driver to the negative terminal of the voltage source when the low side driver turns the low side bidirectional semiconductor switch on. COPYRIGHT: (C)2007,JPO&INPIT
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