发明名称 |
Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
摘要 |
A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.
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申请公布号 |
US2006289901(A1) |
申请公布日期 |
2006.12.28 |
申请号 |
US20060410768 |
申请日期 |
2006.04.25 |
申请人 |
CREE, INC. |
发明人 |
SHEPPARD SCOTT T.;SAXLER ADAM W.;SMITH THOMAS |
分类号 |
H01L29/80;H01L21/338;H01L27/20;H03H3/08;H03H9/02;H03H9/05;H03H9/145 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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