| 摘要 |
A method for forming a mask pattern for an ion implantation process is provided to form an ion implanting mask pattern with an ideal thickness, by filling a gate line pattern with a high aspect ratio with an RELACS material with low viscosity, by forming a photoresist layer on the resultant structure and by forming a barrier layer on an interface of the stacked structure by a bake process. A gate line pattern(123-1) is formed on a semiconductor substrate(121) having an isolation region. A stack structure in which an RELACS layer and a photoresist layer are sequentially formed is formed on the resultant structure. A barrier layer is formed on the interface of the stack structure by a bake process. The stack structure is patterned by an exposure and development process using an exposure mask for ion implantation. An over-descum process is performed by using the stacked structure pattern as a mask. The exposure process is performed by using an exposure light source selected from a group composed of KrF beam, ArF beam, EUV beam, VUV beam, F2 beam and E-beam.
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