| 摘要 |
<P>PROBLEM TO BE SOLVED: To make it possible to perform processing of writing and deletion simply, when a memory cell which memorizes and stores information according to the state of electrical resistance is used. <P>SOLUTION: The memory cell is constituted of a variable resistor element 1, a MOS transistors 2 as a switching element which controls voltage applied to both ends of the variable resistor element 1, and a resistive element 6 with nonlinear current voltage property which is connected between the MOS transistor 2 and the variable resistor elements 1 (or connected to the drain side of the MOS transistor 2 in series). Furthermore, a memory storage provided with this memory cell is disclosed. Owing to possessing the above composition, the voltage applied to the gate of the MOS transistor is made equal at the time of reading and at the time of writing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
