| 摘要 |
A method of manufacturing a dielectric film of a flash memory device, including the steps of providing a semiconductor substrate having floating gates formed therein, performing an oxidization process in a decompression state to form a first oxide film of a thin film on the semiconductor substrate including the floating gates, and sequentially forming a nitride film and a second oxide film on the first oxide film to form a dielectric film having the first oxide film, the nitride film and the second oxide film.
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