SHORT CHANNEL SEMICONDUCTOR DEVICE FABRICATION

摘要

The formation of accumulation mode multi-gate transistor devices (1100) is disclosed. The devices are formed so that short channel effects are mitigated, hi particular, one more types of dopant materials are implanted in a channel region, an extension region and/or source (1104)/drain (1106) regions to mitigate the establishment of a conduction path and the accumulation of electrons in the channel region that can result in an unwanted leakage current.