Nonvolatile memory device for e.g. flash memory device supports programming and verifies operations that improve threshold voltage distribution within programmed memory

摘要

The nonvolatile memory device includes an array of nonvolatile memory cells and the control circuit which is electrically coupled to the array of nonvolatile memory cells. The control circuit performs several programming operations using a mode that repeats a cycle with a larger incremental step range and a shorter verifying time and another mode that repeats a cycle with a smaller incremental step range and a longer verifying time. The control circuit verifies simultaneously that the memory cells coupled to the selected work line is a passed memory cell.