| 摘要 |
An insulated gate-type semiconductor device is provided to avoid an unnecessary current path formed by a parasitic diode when a MOSFET turns off by separately connecting a source electrode and a drain electrode to a body region(back gate region). A drain region is formed by stacking a semiconductor layer of one conductivity type on a semiconductor substrate(1) of one conductivity type. A channel layer(3) of an opposite conductivity type to the one conductivity type is formed on the semiconductor layer. A trench(5) is extended in a first direction on the surface of the semiconductor layer, having a depth penetrating the channel layer. A gate insulation layer is formed on the inner wall of the trench. A gate electrode(7) is filled in the trench. A source region(12) of one conductivity type is formed on the channel layer, adjacent to the trench. A body region(13) of opposite conductivity type is formed on the channel layer, adjacent to the trench and the source region. A first electrode layer(14) is extended in a second direction on the surface of the semiconductor layer, formed on the source region. A second electrode layer(15) is extended in the second direction on the surface of the semiconductor layer, formed on the body region. The first and the second electrode layer are alternately disposed.
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