| 摘要 |
A method for manufacturing a semiconductor device is provided to improve refresh characteristics by reducing an electric field applied to a junction region using an ion implantation on a predetermined portion under a groove. Isolation layers(2) for defining active regions are formed on a semiconductor substrate(1). A photoresist pattern for exposing a gate forming region to the outside is formed on the substrate. A groove is formed by etching the gate forming region of the substrate using the photoresist pattern as an etch mask. A P type ion implantation is selectively performed on a predetermined portion under the groove by using the photoresist pattern as an ion implantation mask. A recess gate(9) is formed on the groove.
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