FABRICATION METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the generation of residual defects by exhausting completely a remaining etch gas from a chamber using a heated induction gas. A semiconductor substrate with a diffusion barrier and a metal material layer is loaded into an etch chamber(402). A dry etching process is performed on the metal material layer until the diffusion barrier is exposed to the outside by using an etch gas(404). A heated induction gas is injected into the etch chamber(406). The etch gas is completely exhausted from the etch chamber by using the heated induction gas(408). The etch gas contains SF6. The induction gas contains Ar gas. The temperature of the induction gas is kept in a predetermined range of 30 to 50 ‹C.