| 摘要 |
A semiconductor device and its manufacturing method are provided to restrain a short channel effect by forming doubly a common channel region in a silicon layer using an enhanced electrode structure composed of first and second electrodes. A silicon layer(25) is formed on a semiconductor substrate(10). A first electrode(10a) is formed in the silicon layer. A first insulating layer(30) encloses the first electrode to separate electrically the substrate, the silicon layer and the first electrode with each other. A second insulating layer(26) is formed on the silicon layer. A second electrode(28) is formed on the second insulating layer, so that a gate electrode structure composed of the first and second electrodes is completed on the resultant structure.
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