CMOS IMAGE DEVICE WITH LOCAL IMPURITY REGION AND METHOD OF MANUFACTURING THE SAME

摘要

A CMOS image device and its manufacturing method are provided to reduce remarkably a dark current by forming locally a P type doped region partially overlapped with a transfer gate in a channel region of a transfer transistor. An isolation layer is formed on a semiconductor substrate(100). A transfer gate(140) is formed on a predetermined portion of the substrate. The transfer gate is electrically isolated from the substrate. A photodiode(180) is formed at one side of the transfer gate in the substrate. A floating diffusion region(185) is formed at the other side of the transfer gate in the substrate. A first conductive type doped region(130) is locally formed in a channel region between the photodiode and the floating diffusion region. The first conductive type doped region is partially overlapped with the transfer gate.