METHOD OF FORMING A OXIDE LAYER

摘要

A method for forming an oxide layer is provided to manufacture the oxide layer excluding a native oxide layer by forming the oxide layer after removing the native oxide layer formed on a substrate by using process gas. A substrate is loaded to a reactor having first temperature(T1)(I-1). As the first temperature of the reactor is ramped up to second temperature(T2), a first process gas including silicon is provided to pre-process the substrate(I-2). The silicon controls a native oxide layer formed on the substrate. The native oxide layer formed on the substrate is removed at atmospheric pressure that a second process gas is provided. The second process gas includes the second temperature and the silicon(I-3). A surface of the substrate is oxidized to form an oxide layer(I-3).