发明名称 Process for producing semiconductor device and semiconductor device
摘要 <p>A method of fabricating a semiconductor device includes the steps of providing a heat-resistant sheet on an interposer so as to cover electrode terminals provided on the interposer, and sealing a semiconductor chip on the interposer sandwiched between molds with a sealing material. The electrode terminals are covered by the heat-resistant resin for protection, and the semiconductor chip is then sealed with resin. It is thus possible to avoid the problem in which contaminations adhere to the electrode terminals. This makes it possible to prevent the occurrence of resin burrs on the interposer and contamination of the electrode pads and to improve the production yield.</p>
申请公布号 GB0622783(D0) 申请公布日期 2006.12.27
申请号 GB20060022783 申请日期 2004.05.20
申请人 SPANSION LLC;SPANSION JAPAN LIMITED 发明人
分类号 H01L21/56;H01L23/28;H01L23/31;H01L23/48;H01L25/10 主分类号 H01L21/56
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