PHASE CHANGE RANDOM ACCESS MEMORY HAVING IMPROVED CORE STRUCTURE

摘要

A phase change memory device is provided to arrange easily stably a bit line select circuit and a bit line discharge circuit regardless of the decrease of a memory cell size by using an improved core structure. A phase change memory device includes a memory cell block, a plurality of global bit lines(GBL1) and bit line select circuits. The bit line select circuits(YSEL1 to YSEL4) are formed on upper and lower portions of the memory cell block. The bit line select circuits are used for connecting alternately a plurality of local bit lines with corresponding global bit lines. The memory cell block includes a plurality of memory cells made of a phase changeable material. The phase changeable material is one selected from a group consisting of Ge, Sb, and Te.