POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR FORMING RESIST PATTERN

摘要

The present invention relates to a positive-type resist composition for liquid immersion lithography and a method of forming a resist pattern, in particular, a positive-type resist composition for liquid immersion lithography that exhibits superior liquid immersion resistance to water; and a method for forming a resist pattern by thereof. The positive-type resist composition for liquid immersion lithography according to the present invention includes a resin component (A) increasing alkali-solubility by acid action; and an acid generator generating acid by exposure; in which, the resin component (A) contains at least one acrylic ester constitutional unit (a1), and one (meth)acrylic ester constitutional unit (a2) having acid dissociable, dissolution inhibiting group, and the constitutional unit (a1) consists of a cyclic group bonded to the acrylic ester of the constitutional unit (a1), and a fluoro organic group bonded to the cyclic group.