| 发明名称 |
Method of working nitride semiconductor crystal |
| 摘要 |
<p>In a method of working a crystal, when a nitride semiconductor crystal (1) is worked, voltage is applied between the nitride semiconductor crystal (1) and a tool electrode (3) to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.</p> |
| 申请公布号 |
EP1736268(A2) |
申请公布日期 |
2006.12.27 |
| 申请号 |
EP20060011947 |
申请日期 |
2006.06.09 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI, KEIJI;HACHIGO, AKIHIRO;NISHIURA, TAKAYUKI |
| 分类号 |
B23H9/00;B24B47/22;H01L21/304 |
主分类号 |
B23H9/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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