| 摘要 |
A method for forming an interlayer dielectric of a semiconductor device is provided to reduce a dielectric constant and to prevent the penetration of moisture through voids by using a PE(Plasma Enhanced)-oxide layer with voids and an SOG(Silicon On Glass) oxide layer without voids. A plurality of metal lines are formed in X and Y axis directions on a substrate(110). A triple point is formed on the resultant structure. A first insulating layer is deposited between the metal lines formed in the Y axis direction on the resultant structure. The first insulating layer has first voids(113a) and second voids. A first upper portion of the first void is closed and a second upper portion of the second void is opened at the triple point. A second insulating layer(114) for filling the second voids is formed on the resultant structure. The first insulating layer is a PE-oxide layer. The second insulating layer is an SOG oxide layer.
|
