| 摘要 |
A method for manufacturing an FET(Field Effect Transistor) is provided to secure stably a fin channel region by performing a fin etching process after skipping a liner nitride forming process. A trench is formed on a predetermined substrate structure(11). A wall oxide layer(15) is formed along an inner surface of the trench. An isolation layer(16) is completely filled in the trench. A fin is formed on the resultant structure by performing a recessing process on the isolation layer and the wall oxide layer. The recessing process is one selected from a group consisting of a wet etching process or a dry etching process.
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