| 摘要 |
<p>Disclosed is a positive resist composition containing a base resin component (A) and an acid generator component (B). The component (A) is a copolymer having a constitutional unit (a-1) derived from an (alpha-lower alkyl) acrylate containing an acid-cleavable dissolution inhibiting group and an alicyclic group, a constitutional unit (a-2) derived from an (alpha-lower alkyl) acrylate containing a gamma-butyrolactone group, and a constitutional unit (a-3) derived from an (alpha-lower alkyl) acrylate containing a hydroxyl group-containing aliphatic polycyclic hydrocarbon group, and the copolymer has a Tg within the range of 100-170°C. Also disclosed is a method for forming a resist pattern by a lithography process wherein a chemically amplified positive resist composition is applied onto a substrate for forming a resist film, and the thus-formed resist film is selectively exposed, then subjected to post exposure baking (PEB), and then subjected to alkaline development. In this method, the PEB temperature in the lithography process is set within ±2°C of the PEB temperature at which the line and space pattern formed by this lithography process is maximum.</p> |
