发明名称 THIN FILM TRANSISTOR
摘要 <p>A TFT is provided to transfer exactly a predetermined current to an organic light emissive layer and to improve the uniformity of brightness in each pixel by using a plurality of channel regions with uniform widths. A semiconductor layer and an insulating layer are formed on an insulating substrate. The semiconductor layer(7) is composed of first and second conductive regions(7b,7c) and a channel region(7a) between the first and the second conductive region. A gate electrode is formed on the insulating layer corresponding to the channel region. Source and drain electrodes(11,12) are connected to the first and the second conductive region. The channel region is composed of a plurality of portions. The width of each channel portion is in a predetermined range of 5 to 30 mum.</p>
申请公布号 KR20060133918(A) 申请公布日期 2006.12.27
申请号 KR20060055769 申请日期 2006.06.21
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 TAKEGUCHI TORU;MIYAKAWA OSAMU
分类号 H01L29/786 主分类号 H01L29/786
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