| 摘要 |
A thin film transistor substrate and a method for manufacturing the thin film transistor substrate are provided to prevent the pattern defect of an active layer due to random scatter of nanowire, by forming a groove in a gate insulating layer and then applying the nanowire in the groove of the gate insulating layer through inkjet type. A gate electrode(132) is formed on a substrate(101). A gate insulating material is applied onto the resultant substrate including the gate electrode, and then pattern-etched to form a gate insulating layer(106) having a groove(107). The groove of the gate insulating layer is disposed at a region corresponding to an active layer(138) to be formed. The active layer is formed in the groove of the gate insulating layer by using a nanowire. Subsequent manufacturing processes are performed, thereby forming source and drain electrodes, a passivation layer, and a pixel electrode. |
