| 摘要 |
FIELD: semiconductor devices for nuclear and laser engineering, technical and medical tomography, and the like. ^ SUBSTANCE: proposed silicon photoelectronic multiplier is available of two design alternates. Silicon photoelectronic multiplier of design alternate 1 has p substrate with dope concentration of 1018 to 1020 cm-3 assembled of locations, each incorporating p epitaxial layer with concentration of dope grown on substrate varying in gradient manner between 1018 and 1014 cm-3, p layer with dope concentration of 1015 to 1017 cm-3, and n+ layer with dope concentration of 1018 to 1020 cm-3; polysilicon resistor disposed in each location on silicon oxide layer functions to connect n+ layer to power bus; isolating components are inserted between locations. Silicon photoelectronic multiplier of design alternate 2 has n substrate carrying p++ layer with dope concentration of 1018 to 1020 cm-3 and is assembled of locations whose structure is similar to that of design alternate 1; disposed in each location on silicon oxide layer is polysilicon resistor and isolating components are inserted between locations. ^ EFFECT: enhanced efficiency of light beam recording in wide wavelength band due to enhanced sensitivity of locations, enhanced single electron resolution and excess noise suppression. ^ 3 cl, 3 dwg |
