发明名称 |
Oxide sintered body, sputtering target, transparent conductive thin film and manufacturing method therefor |
摘要 |
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In<SUB>2</SUB>O<SUB>3 </SUB>powder, WO<SUB>3 </SUB>powder, and ZnO powder with an average grain size of less than 1 mum so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 mum; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm<SUP>2</SUP>, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m<SUP>3 </SUP>furnace volume.
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申请公布号 |
US7153453(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20050115971 |
申请日期 |
2005.04.27 |
申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
ABE YOSHIYUKI;NAKAYAMA TOKUYUKI;OHARA GO;WAKE RIICHIRO |
分类号 |
H01B1/08;H01L51/50;B23K1/00;B32B15/04;C04B35/00;C04B35/01;C04B35/495;C04B37/02;C23C14/00;C23C14/08;C23C14/34;H01B5/14;H01B13/00;H05B33/14;H05B33/28 |
主分类号 |
H01B1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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