Method for fabricating flash memory device

摘要

A flash memory device fabrication method is disclosed. A disclosed method comprises: forming an oxide layer on a substrate; depositing a first polysilicon on the entire surface of the oxide layer and patterning the first polysilicon; depositing an insulating layer on the entire surface of the first polysilicon and patterning the insulating layer to expose the first polysilicon; depositing a second polysilicon on the entire surface of the resulting structure and patterning the second polysilicon; removing the insulating layer; depositing a dielectric layer on the entire surface of the resulting structure; and depositing a third polysilicon on the entire surface of the dielectric layer.