发明名称 |
Method of forming self-aligned poly for embedded flash |
摘要 |
A method of manufacturing a microelectronic device including, in one embodiment, providing a substrate having a plurality of partially completed microelectronic devices including at least one partially completed memory device and at least one partially completed transistor. At least a portion of the partially completed transistor is protected by forming a first layer over the portion of the partially completed transistor to be protected during a subsequent material removal step. A second layer is formed substantially covering the partially completed memory device and the partially completed transistor. Portions of the second layer are removed leaving a portion of the second layer over the partially completed memory device. At least a substantial portion of the first layer is removed from the partially completed transistor after the portions of the second layer are removed.
|
申请公布号 |
US7153744(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20040822505 |
申请日期 |
2004.04.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN HAN-PING;YU CHUNG-YI |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L27/12;H01L29/423;H01L29/76;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|