Low Voltage Dual-Well MOS Device Having Ruggedness, Low On-Resistance, and Improved Body Diode Reverse Recovery,申请号KR20000030639-传众专利搜索

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发明名称	Low Voltage Dual-Well MOS Device Having Ruggedness, Low On-Resistance, and Improved Body Diode Reverse Recovery
摘要
申请公布号	KR100660764(B1)	申请公布日期	2006.12.26
申请号	KR20000030639	申请日期	2000.06.03
申请人		发明人
分类号	H01L29/772;H01L21/336;H01L29/08;H01L29/78	主分类号	H01L29/772
代理机构		代理人
主权项
地址

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