发明名称 |
Methods of forming capacitors and methods of forming capacitor dielectric layers |
摘要 |
A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
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申请公布号 |
US7153736(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20040779244 |
申请日期 |
2004.02.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
EPPICH DENISE M.;BEAMAN KEVIN L. |
分类号 |
H01L21/8242;H01L27/04;H01L21/02;H01L21/3105;H01L21/314;H01L21/318;H01L21/822;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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