发明名称 |
Method for reducing amine based contaminants |
摘要 |
A method for reducing resist poisoning is provided. The method includes forming a first structure in a dielectric on a substrate and reducing amine related contaminants from the dielectric and the substrate created after the formation of the first structure. The method further includes forming a second structure in the dielectric. A first organic film may be formed on the substrate which is then heated and removed from the substrate to reduce the contaminant. Alternatively, a plasma treatment or cap may be provided. A second organic film is formed on the substrate and patterned to define a second structure in the dielectric.
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申请公布号 |
US7153776(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20030605926 |
申请日期 |
2003.11.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN XIAOMENG;COTE WILLIAM;STAMPER ANTHONY K.;WINSLOW ARTHUR C. |
分类号 |
H01L21/302;H01L21/306;H01L21/3105;H01L21/311;H01L21/312;H01L21/316;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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