发明名称 |
Method for achieving uniform CU CMP polishing |
摘要 |
A method for removing a metal oxide overlayer over a target polishing surface in conjunction with a chemical mechanical polishing (CMP) process to improve polishing uniformity including providing a substrate target polishing surface having a layer of an oxide of a metal overlying said metal to be chemically mechanically polished; removing the layer of an oxide of the metal using an oxide removal solution prior to performing a CMP process with an abrasive slurry; and, polishing the target polishing surface according to an a CMP process with an abrasive slurry including at least one of an oxidizer and a complexing agent.
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申请公布号 |
US7153197(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20020140728 |
申请日期 |
2002.05.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
SHIH TSU;LEE SA-NA;JANG SYUN-MING;CHUNG CHI-WENG |
分类号 |
B24B1/00;B24B37/04;C23G1/02;H01L21/316;H01L21/321 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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