发明名称 Method for achieving uniform CU CMP polishing
摘要 A method for removing a metal oxide overlayer over a target polishing surface in conjunction with a chemical mechanical polishing (CMP) process to improve polishing uniformity including providing a substrate target polishing surface having a layer of an oxide of a metal overlying said metal to be chemically mechanically polished; removing the layer of an oxide of the metal using an oxide removal solution prior to performing a CMP process with an abrasive slurry; and, polishing the target polishing surface according to an a CMP process with an abrasive slurry including at least one of an oxidizer and a complexing agent.
申请公布号 US7153197(B2) 申请公布日期 2006.12.26
申请号 US20020140728 申请日期 2002.05.07
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 SHIH TSU;LEE SA-NA;JANG SYUN-MING;CHUNG CHI-WENG
分类号 B24B1/00;B24B37/04;C23G1/02;H01L21/316;H01L21/321 主分类号 B24B1/00
代理机构 代理人
主权项
地址