发明名称 Semiconductor device having multilevel interconnection
摘要 A semiconductor device having a multilevel interconnection encompasses (a) a subject level interconnect, (b) a subject interlevel insulator disposed on the subject level interconnect, (c) a connecting via-plug buried in the subject interlevel insulator, the bottom surface of the connecting via-plug is in contact with the subject level interconnect, (d) a dummy via-plug buried in the subject interlevel insulator, the top surface of the dummy via-plug is electrically open, and (e) an upper level interconnect of the subject level interconnect, disposed at the top surface of the subject interlevel insulator, being contact with the top surface of the connecting via-plug.
申请公布号 US7154183(B2) 申请公布日期 2006.12.26
申请号 US20040983090 申请日期 2004.11.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUJIMAKI TAKESHI
分类号 H01L21/31;H01L21/3205;H01L21/44;H01L21/4763;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/31
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