发明名称 Chamber for high-pressure wafer processing and method for making the same
摘要 Broadly speaking, a wafer processing chamber for performing a high pressure wafer process is provided. More specifically, the wafer processing chamber incorporates a wafer processing volume and an outer chamber volume. The wafer processing volume is configured to contain a high pressure. The outer chamber volume is configured to serve as a buffer between the high pressure of the wafer processing volume and a lower pressure of an environment outside the wafer processing chamber. Thus, the outer chamber volume can control a pressure differential between the high pressure wafer processing volume and the lower pressure outside environment. In this manner, the wafer processing chamber, incorporating the high pressure wafer processing volume, can interface with a conventional wafer transfer module operating under either atmospheric or sub-atmospheric pressure conditions.
申请公布号 US7153388(B2) 申请公布日期 2006.12.26
申请号 US20030404502 申请日期 2003.03.31
申请人 LAM RESEARCH CORPORATION 发明人 PARKS JOHN
分类号 C23F1/00;B08B3/00;C23C16/00;G03F7/20;H01L21/00;H01L21/306 主分类号 C23F1/00
代理机构 代理人
主权项
地址