| 摘要 |
<p>A method for manufacturing a mask for exposing is provided to revise a line width of a light-blocking layer pattern or a phase shift layer pattern when the line width being formed is greater than a desired line width by using a relationship between a line width and an etching rate. A light-blocking layer is formed on a mask substrate(100). A photoresist pattern(102) is formed on the light-blocking layer to define a light transparent region. The light-blocking layer is etched by using the photoresist pattern as a mask to form a light-blocking layer pattern(104). A line width of the light-blocking layer pattern is measured. In case the measured line width is greater than a desired line width of the light-blocking layer pattern, an etching process is proceeded during a predetermined time defined by a relationship of [(the measured line width - the desired line width)/(an etching ratio per hour of the light-blocking layer pattern)]. The photoresist pattern is removed.</p> |
