METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to reduce critical dimension of a recess channel in a transistor having the recess channel by securing an open critical value of a recess. A recess mask pattern is formed on a semiconductor substrate(11). A spacer is formed on a sidewall of the recess mask pattern. A recess is formed by performing an etch process using the spacer and the recess mask pattern as an etch mask. A gate is formed on the recess. The line width of the recess mask pattern is larger than the line width of the recess. The spacer is formed with the same material as the recess mask pattern. The spacer is formed with a polysilicon layer(19).