发明名称 |
Method for forming metal contact in semiconductor device |
摘要 |
A method for forming a metal contact in a semiconductor device includes the steps of: forming a bottom wire connected with a metal wire on a substrate; forming an inter-layer insulation layer on an entire surface of a substrate substructure including the bottom wire and the substrate; forming a metal contact hard mask layer on the inter-layer insulation layer; forming a photosensitive layer pattern defining a contact hole on the metal contact hard mask layer; etching the metal contact hard mask layer by using the photosensitive layer pattern as an etch barrier layer; etching the inter-layer insulation layer with use of the etched metal contact hard mask layer as an etch barrier layer to thereby form the contact hole; and forming a metal contact connected to the substrate within the contact hole.
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申请公布号 |
US7153771(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20040880348 |
申请日期 |
2004.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
EUN BYUNG-SOO |
分类号 |
H01L21/28;H01L21/44;H01L21/02;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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