发明名称 |
Semiconductor device provided by silicon carbide substrate and method for manufacturing the same |
摘要 |
A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.
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申请公布号 |
US7154130(B2) |
申请公布日期 |
2006.12.26 |
申请号 |
US20040776338 |
申请日期 |
2004.02.12 |
申请人 |
DENSO CORPORATION |
发明人 |
KUMAR RAJESH;UDREA FLORIN;MIHAILA ANDREI |
分类号 |
H01L29/74;H01L21/04;H01L21/337;H01L21/8232;H01L21/8234;H01L27/06;H01L27/07;H01L27/088;H01L27/095;H01L29/24;H01L29/80;H01L29/808;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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