| 发明名称 |
Method of manufacturing semiconductor device and semiconductor device manufactured using the same |
| 摘要 |
A semiconductor device comprising a metal silicide film with uniform surface morphology and interface morphology and a method of manufacturing the same are provided. The metal silicide film of the semiconductor device exhibits low sheet resistance and excellent thermal stability. Therefore, by using the semiconductor device fabrication method, high performance, high quality semiconductor devices can be manufactured.
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| 申请公布号 |
US7153770(B2) |
申请公布日期 |
2006.12.26 |
| 申请号 |
US20030745578 |
申请日期 |
2003.12.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI CHEL-JONG |
| 分类号 |
H01L21/28;H01L21/24;H01L21/285;H01L21/336;H01L21/44;H01L21/8238;H01L27/092;H01L29/417;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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