发明名称 Semiconductor integrated circuit device
摘要 A nonvolatile memory working on a different operating voltage from a logical functional unit is to be operated at high speed with a single line voltage supplied from outside. A nonvolatile memory is disposed in a semiconductor integrated circuit device. This semiconductor integrated circuit device is provided with core regulators for generating from an externally supplied line voltage, different operating line voltages, a PLL regulator, a regulator for power supply circuit and a regulator for decoder. The regulator for power supply circuit and the regulator for decoder respectively generate, from the externally supplied line voltage, a first line voltage and a second line voltage to be supplied to the nonvolatile memory. The core regulators generate line voltages to be supplied to internal modules of the semiconductor integrated circuit device, and the PLL regulator generates a line voltage for the PLL.
申请公布号 US7154786(B2) 申请公布日期 2006.12.26
申请号 US20040960996 申请日期 2004.10.12
申请人 RENESAS TECHNOLOGY CORP. 发明人 IKAI TOSHIHARU;ITO TAKENORI;TAKANO HIBIKI
分类号 G11C16/04;G11C16/06;G11C5/14;G11C11/34 主分类号 G11C16/04
代理机构 代理人
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